Properties of SiGe oxides grown in a microwave oxygen plasma

Mukhopadhyay, M. ; Ray, S. K. ; Maiti, C. K. ; Nayak, D. K. ; Shiraki, Y.

[S.l.] : American Institute of Physics (AIP)
Published 1995
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289649895997443
autor Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
autorsonst Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
book_url http://dx.doi.org/10.1063/1.360556
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218533691
issn 1089-7550
journal_name Journal of Applied Physics
materialart 1
notes Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1995
publikationsjahr_facette 1995
publikationsjahr_intervall 8004:1995-1999
publikationsjahr_sort 1995
publikationsort [S.l.]
publisher American Institute of Physics (AIP)
reference 78 (1995), S. 6135-6140
search_space articles
shingle_author_1 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
shingle_author_2 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
shingle_author_3 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
shingle_author_4 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
shingle_catch_all_1 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
Properties of SiGe oxides grown in a microwave oxygen plasma
Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_2 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
Properties of SiGe oxides grown in a microwave oxygen plasma
Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_3 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
Properties of SiGe oxides grown in a microwave oxygen plasma
Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_4 Mukhopadhyay, M.
Ray, S. K.
Maiti, C. K.
Nayak, D. K.
Shiraki, Y.
Properties of SiGe oxides grown in a microwave oxygen plasma
Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_title_1 Properties of SiGe oxides grown in a microwave oxygen plasma
shingle_title_2 Properties of SiGe oxides grown in a microwave oxygen plasma
shingle_title_3 Properties of SiGe oxides grown in a microwave oxygen plasma
shingle_title_4 Properties of SiGe oxides grown in a microwave oxygen plasma
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timestamp 2024-05-06T08:04:12.307Z
titel Properties of SiGe oxides grown in a microwave oxygen plasma
titel_suche Properties of SiGe oxides grown in a microwave oxygen plasma
topic U
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