Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
The diffusion of platinum into lightly damaged regions of ion-implanted silicon has been investigated using deep-level transient spectroscopy and capacitance-voltage profiling. The samples consisted of PtSi/Si n-type Schottky diodes which had been implanted with O, F, or Cl to an intermediate depth between the zero-bias and reverse-bias depletion boundaries, and subsequently annealed at a temperature of 700 °C. The distribution of in-diffused Pt was obtained by monitoring the electron emission from the acceptor level (EC−ET=0.23 eV) previously assigned to Pt in a distorted substitutional configuration. The Pt was found to be distributed approximately congruous with the vacancy distribution generated during implantation. For a typical implantation dose (≈1011 cm−2) we recorded an enhanced accumulation of Pt by about two orders of magnitude as compared to diffusion into nonimplanted material. This apparent decoration of the primary damage profile occurs without the simultaneous introduction of other electrically active defects on a comparable scale. We infer that the residual damage present during annealing is sufficient to promote accumulation to saturation of substitutional Pt in the region of primary implantation damage. This rather remarkable property of guided in-diffusion, a kind of gettering phenomenon, may have potential applications in Si-device engineering. © 1995 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289650119344129 |
|---|---|
| autor | Holm, B. Bonde Nielsen, K. |
| autorsonst | Holm, B. Bonde Nielsen, K. |
| book_url | http://dx.doi.org/10.1063/1.360600 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218533438 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | The diffusion of platinum into lightly damaged regions of ion-implanted silicon has been investigated using deep-level transient spectroscopy and capacitance-voltage profiling. The samples consisted of PtSi/Si n-type Schottky diodes which had been implanted with O, F, or Cl to an intermediate depth between the zero-bias and reverse-bias depletion boundaries, and subsequently annealed at a temperature of 700 °C. The distribution of in-diffused Pt was obtained by monitoring the electron emission from the acceptor level (EC−ET=0.23 eV) previously assigned to Pt in a distorted substitutional configuration. The Pt was found to be distributed approximately congruous with the vacancy distribution generated during implantation. For a typical implantation dose (≈1011 cm−2) we recorded an enhanced accumulation of Pt by about two orders of magnitude as compared to diffusion into nonimplanted material. This apparent decoration of the primary damage profile occurs without the simultaneous introduction of other electrically active defects on a comparable scale. We infer that the residual damage present during annealing is sufficient to promote accumulation to saturation of substitutional Pt in the region of primary implantation damage. This rather remarkable property of guided in-diffusion, a kind of gettering phenomenon, may have potential applications in Si-device engineering. © 1995 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1995 |
| publikationsjahr_facette | 1995 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1995 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 78 (1995), S. 5970-5974 |
| search_space | articles |
| shingle_author_1 | Holm, B. Bonde Nielsen, K. |
| shingle_author_2 | Holm, B. Bonde Nielsen, K. |
| shingle_author_3 | Holm, B. Bonde Nielsen, K. |
| shingle_author_4 | Holm, B. Bonde Nielsen, K. |
| shingle_catch_all_1 | Holm, B. Bonde Nielsen, K. Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon The diffusion of platinum into lightly damaged regions of ion-implanted silicon has been investigated using deep-level transient spectroscopy and capacitance-voltage profiling. The samples consisted of PtSi/Si n-type Schottky diodes which had been implanted with O, F, or Cl to an intermediate depth between the zero-bias and reverse-bias depletion boundaries, and subsequently annealed at a temperature of 700 °C. The distribution of in-diffused Pt was obtained by monitoring the electron emission from the acceptor level (EC−ET=0.23 eV) previously assigned to Pt in a distorted substitutional configuration. The Pt was found to be distributed approximately congruous with the vacancy distribution generated during implantation. For a typical implantation dose (≈1011 cm−2) we recorded an enhanced accumulation of Pt by about two orders of magnitude as compared to diffusion into nonimplanted material. This apparent decoration of the primary damage profile occurs without the simultaneous introduction of other electrically active defects on a comparable scale. We infer that the residual damage present during annealing is sufficient to promote accumulation to saturation of substitutional Pt in the region of primary implantation damage. This rather remarkable property of guided in-diffusion, a kind of gettering phenomenon, may have potential applications in Si-device engineering. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Holm, B. Bonde Nielsen, K. Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon The diffusion of platinum into lightly damaged regions of ion-implanted silicon has been investigated using deep-level transient spectroscopy and capacitance-voltage profiling. The samples consisted of PtSi/Si n-type Schottky diodes which had been implanted with O, F, or Cl to an intermediate depth between the zero-bias and reverse-bias depletion boundaries, and subsequently annealed at a temperature of 700 °C. The distribution of in-diffused Pt was obtained by monitoring the electron emission from the acceptor level (EC−ET=0.23 eV) previously assigned to Pt in a distorted substitutional configuration. The Pt was found to be distributed approximately congruous with the vacancy distribution generated during implantation. For a typical implantation dose (≈1011 cm−2) we recorded an enhanced accumulation of Pt by about two orders of magnitude as compared to diffusion into nonimplanted material. This apparent decoration of the primary damage profile occurs without the simultaneous introduction of other electrically active defects on a comparable scale. We infer that the residual damage present during annealing is sufficient to promote accumulation to saturation of substitutional Pt in the region of primary implantation damage. This rather remarkable property of guided in-diffusion, a kind of gettering phenomenon, may have potential applications in Si-device engineering. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Holm, B. Bonde Nielsen, K. Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon The diffusion of platinum into lightly damaged regions of ion-implanted silicon has been investigated using deep-level transient spectroscopy and capacitance-voltage profiling. The samples consisted of PtSi/Si n-type Schottky diodes which had been implanted with O, F, or Cl to an intermediate depth between the zero-bias and reverse-bias depletion boundaries, and subsequently annealed at a temperature of 700 °C. The distribution of in-diffused Pt was obtained by monitoring the electron emission from the acceptor level (EC−ET=0.23 eV) previously assigned to Pt in a distorted substitutional configuration. The Pt was found to be distributed approximately congruous with the vacancy distribution generated during implantation. For a typical implantation dose (≈1011 cm−2) we recorded an enhanced accumulation of Pt by about two orders of magnitude as compared to diffusion into nonimplanted material. This apparent decoration of the primary damage profile occurs without the simultaneous introduction of other electrically active defects on a comparable scale. We infer that the residual damage present during annealing is sufficient to promote accumulation to saturation of substitutional Pt in the region of primary implantation damage. This rather remarkable property of guided in-diffusion, a kind of gettering phenomenon, may have potential applications in Si-device engineering. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Holm, B. Bonde Nielsen, K. Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon The diffusion of platinum into lightly damaged regions of ion-implanted silicon has been investigated using deep-level transient spectroscopy and capacitance-voltage profiling. The samples consisted of PtSi/Si n-type Schottky diodes which had been implanted with O, F, or Cl to an intermediate depth between the zero-bias and reverse-bias depletion boundaries, and subsequently annealed at a temperature of 700 °C. The distribution of in-diffused Pt was obtained by monitoring the electron emission from the acceptor level (EC−ET=0.23 eV) previously assigned to Pt in a distorted substitutional configuration. The Pt was found to be distributed approximately congruous with the vacancy distribution generated during implantation. For a typical implantation dose (≈1011 cm−2) we recorded an enhanced accumulation of Pt by about two orders of magnitude as compared to diffusion into nonimplanted material. This apparent decoration of the primary damage profile occurs without the simultaneous introduction of other electrically active defects on a comparable scale. We infer that the residual damage present during annealing is sufficient to promote accumulation to saturation of substitutional Pt in the region of primary implantation damage. This rather remarkable property of guided in-diffusion, a kind of gettering phenomenon, may have potential applications in Si-device engineering. © 1995 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon |
| shingle_title_2 | Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon |
| shingle_title_3 | Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon |
| shingle_title_4 | Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:12.224Z |
| titel | Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon |
| titel_suche | Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon |
| topic | U |
| uid | nat_lic_papers_NLZ218533438 |