Determination of free carrier concentration in n-GaInP alloy by Raman scattering
Sinha, K. ; Mascarenhas, A. ; Kurtz, Sarah R. ; Olson, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1995
[S.l.] : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |