Detecting subsurface hot electrons with a scanning probe microscope
Vázquez, F. ; Furuya, K. ; Kobayashi, D.
[S.l.] : American Institute of Physics (AIP)
Published 1996
[S.l.] : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We propose a new kind of scanning probe microscope, the scanning hot electron microscope, which allows the detection of hot electrons emitted from a subsurface semiconductor structure. The principle of operation corresponds to a reversely biased ballistic-electron-emitting microscope (BEEM) so that hot electrons flow from sample to tip, where they are collected after being modulated at an appropriate frequency. Theoretical conditions for hot electron detection are discussed. In particular, the hot electron-generated current should be high enough compared with the ac component of the current generated by thermalized electrons in a residual resistance, which forces some changes in the usual BEEM configuration. A suitable experimental setup is proposed. When implemented, this technique will allow the visualization of subsurface wave electron effects in semiconductor structures. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |