Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks
Voss, M. ; Lier, C. ; Menzel, U. ; Bärwolff, A. ; Elsaesser, T.
[S.l.] : American Institute of Physics (AIP)
Published 1996
[S.l.] : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Laser radiation from GaAs/AlGaAs laser diode arrays of high output power is studied during nano- to millisecond carrier injection in temporally and spectrally resolved emission measurements. A red shift of the multimode emission spectrum by up to 12 nm and a concomitant increase of the total bandwidth are caused by a transient rise of the device temperature by up to 50 K. Spatially resolved experiments reveal a lateral temperature difference of about 2 K between the center and the edge emitters. Different laser array/heat sink combinations are investigated in order to reduce the transient temperature increase. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |