Magnetic and electrical properties of CoFeSiB:O thin films near the percolation threshold : The 40th annual conference on magnetism and magnetic materials
Banerjee, R. ; Valanju, A. P. ; Choe, G. ; Walser, R. M.
[S.l.] : American Institute of Physics (AIP)
Published 1996
[S.l.] : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Nanocomposite thin films with coexisting magnetic metal and magnetic nonmetal amorphous phases were synthesized by reactively sputtering CoFeSiB:O thin films with a large silicon (15 at.%), and varying oxygen concentrations. The microstructure, magnetization, and hysteresis loops were measured for films with resistivities near the metal–nonmetal transition. These data revealed that, below the metal–nonmetal transition, conductive transport was along the soft magnetic, metallic backbone of the percolation network; the nonmetal phase was a discontinuous, randomly distributed, hard magnetic oxide. The metallic resistivity and exchange anisotropy were both maximized in a nanocomposite with a resistivity at the metal–nonmetal transition. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |