Giant magnetoresistive memory effect in Nd0.7Sr0.3MnOz (abstract) : The 40th annual conference on magnetism and magnetic materials

Xiong, G. C. ; Li, Q. ; Ju, H. L. ; Greene, R. L. ; Venkatesan, T. ; Dominguez, M. ; Lofland, S. E. ; Bhagat, S. M.

[S.l.] : American Institute of Physics (AIP)
Published 1996
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of a magnetic field (B). Here we reported that the conductivity of the films depends not only on the applied field but also on the magnetic history. At T well below the temperature Tp where the zero-field resistivity has a peak, the film enters a high conductivity state [(ΔR/RB)(approximately-greater-than)103] upon application of a magnetic field which persists even when B is reduced to zero. The original "zero'' field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. That is, while the remanent magnetization is small the remanent magnetic resistivity is 10−3 times the initial zero-field-cooled resistivity. A possible explanation based on a two-component model of semiconducting matrix with embedded shunting paths of ferromagnetic material will be presented. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL: