Facet and bulk heating of GaAs/AlGaAs high-power laser arrays studied in spatially resolved emission and micro-Raman experiments
Puchert, R. ; Bärwolff, A. ; Menzel, U. ; Lau, A. ; Voss, M. ; Elsaesser, T.
[S.l.] : American Institute of Physics (AIP)
Published 1996
[S.l.] : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Temperature profiles in the bulk and at the front facet of a 20 emitter GaAs/AlGaAs double-quantum-well laser array are studied by spatially resolved luminescence and micro-Raman spectroscopy. For optical output powers of about 1 W, the facet temperature of the individual emitters differs by up to 90 K. In contrast, the temperature distribution inside the resonator is highly uniform with temperature differences of less than 2 K. The facet temperature distribution correlates with the near-field intensity pattern of the laser array. Reabsorption of laser emission close to the facet and subsequent surface recombination of the photogenerated carriers represent the main heating mechanism. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |