Spin-polarized tunneling between ferromagnetic films
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/ insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289646152581120 |
|---|---|
| autor | Gu, R. Y. Xing, D. Y. Dong, Jinming |
| autorsonst | Gu, R. Y. Xing, D. Y. Dong, Jinming |
| book_url | http://dx.doi.org/10.1063/1.363740 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218501331 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/ insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data. © 1996 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1996 |
| publikationsjahr_facette | 1996 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1996 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 80 (1996), S. 7163-7165 |
| search_space | articles |
| shingle_author_1 | Gu, R. Y. Xing, D. Y. Dong, Jinming |
| shingle_author_2 | Gu, R. Y. Xing, D. Y. Dong, Jinming |
| shingle_author_3 | Gu, R. Y. Xing, D. Y. Dong, Jinming |
| shingle_author_4 | Gu, R. Y. Xing, D. Y. Dong, Jinming |
| shingle_catch_all_1 | Gu, R. Y. Xing, D. Y. Dong, Jinming Spin-polarized tunneling between ferromagnetic films Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/ insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Gu, R. Y. Xing, D. Y. Dong, Jinming Spin-polarized tunneling between ferromagnetic films Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/ insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Gu, R. Y. Xing, D. Y. Dong, Jinming Spin-polarized tunneling between ferromagnetic films Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/ insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Gu, R. Y. Xing, D. Y. Dong, Jinming Spin-polarized tunneling between ferromagnetic films Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/ insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Spin-polarized tunneling between ferromagnetic films |
| shingle_title_2 | Spin-polarized tunneling between ferromagnetic films |
| shingle_title_3 | Spin-polarized tunneling between ferromagnetic films |
| shingle_title_4 | Spin-polarized tunneling between ferromagnetic films |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:08.914Z |
| titel | Spin-polarized tunneling between ferromagnetic films |
| titel_suche | Spin-polarized tunneling between ferromagnetic films |
| topic | U |
| uid | nat_lic_papers_NLZ218501331 |