Thermal stability of sulfur-treated InP investigated by photoluminescence
Han, I. K. ; Woo, D. H. ; Kim, H. J. ; Kim, E. K. ; Lee, J. I. ; Kim, S. H. ; Kang, K. N. ; Lim, H. ; Park, H. L.
[S.l.] : American Institute of Physics (AIP)
Published 1996
[S.l.] : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289645524484096 |
|---|---|
| autor | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. |
| autorsonst | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. |
| book_url | http://dx.doi.org/10.1063/1.363366 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218495412 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1996 |
| publikationsjahr_facette | 1996 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1996 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 80 (1996), S. 4052-4057 |
| search_space | articles |
| shingle_author_1 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. |
| shingle_author_2 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. |
| shingle_author_3 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. |
| shingle_author_4 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. |
| shingle_catch_all_1 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. Thermal stability of sulfur-treated InP investigated by photoluminescence The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. Thermal stability of sulfur-treated InP investigated by photoluminescence The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. Thermal stability of sulfur-treated InP investigated by photoluminescence The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Han, I. K. Woo, D. H. Kim, H. J. Kim, E. K. Lee, J. I. Kim, S. H. Kang, K. N. Lim, H. Park, H. L. Thermal stability of sulfur-treated InP investigated by photoluminescence The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Thermal stability of sulfur-treated InP investigated by photoluminescence |
| shingle_title_2 | Thermal stability of sulfur-treated InP investigated by photoluminescence |
| shingle_title_3 | Thermal stability of sulfur-treated InP investigated by photoluminescence |
| shingle_title_4 | Thermal stability of sulfur-treated InP investigated by photoluminescence |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:05.270Z |
| titel | Thermal stability of sulfur-treated InP investigated by photoluminescence |
| titel_suche | Thermal stability of sulfur-treated InP investigated by photoluminescence |
| topic | U |
| uid | nat_lic_papers_NLZ218495412 |