Electronic transport and metastabilities in P-doped a-Si:H
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Effect of thermal and light induced metastabilities on conductivity (σ) and thermopower (S) in phosphorus doped a-Si:H films has been studied. It has been found that although both conductivity and thermopower show a change upon fast quenching, the function Q=ln σ−eS/k does not change. This suggests that quenching results in a new frozen-in structure, in which the position of the Fermi level is changed, but there is no change in the potential fluctuations. No measurable effect of light soaking is observed in our films. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |