Fullerene-based polymer grid triodes
McElvain, J. ; Keshavarz, M. ; Wang, H. ; Wudl, F. ; Heeger, A. J.
[S.l.] : American Institute of Physics (AIP)
Published 1997
[S.l.] : American Institute of Physics (AIP)
Published 1997
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report the fabrication of polymer grid triodes (PGTs) using C60 as the semiconducting medium. The structure, a self-assembling porous conducting polyaniline network placed between two semiconducting layers of C60, and sandwiched between two metal electrodes, demonstrates the I–V characteristics of a three terminal device in which the current is controlled by the grid potential. As a result of the higher mobilities of the fullerenes compared to those of conjugated polymers, the fullerene devices offer some performance advantages; the operating voltages are less than 5 V with current densities exceeding 1 mA/cm2. By fabricating devices with different grid densities, it is shown that the grid exhibits a strong influence on the I–V characteristics for high grid densities, and a correspondingly low influence for low densities, in agreement with theory. The I–V characteristics of the C60 PGTs are well described by an effective diode model, similar to that used for vacuum triodes. © 1997 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |