Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices
Wagner, J. ; Schmitz, J. ; Herres, N. ; Fuchs, F. ; Walther, M.
[S.l.] : American Institute of Physics (AIP)
Published 1998
[S.l.] : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The pseudodielectric function of InAs/Ga1−xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy, was measured by spectroscopic ellipsometry (SE) for photon energies ranging from 1.2 to 5 eV. The width of the extrema in the SL pseudodielectric function derived from the E1 and E1+Δ1 interband transitions of the SL constituents InAs and Ga1−xInxSb, was found to depend on the structural quality of the SL. Differences in the SL quality caused by different sequences of InSb- like and GaAs-like interfaces, were easily detected by SE. The formation of the intended interface alternations was verified by Raman spectroscopy. The extrema in the SL pseudodielectric function originating from the E1 and E1+Δ1 interband transitions of Ga1−xInxSb were found to shift to lower energies with increasing In content x. Finally SE has been applied to the analysis of a complete InAs/Ga1−xInxSb SL detector structure. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289641300819968 |
|---|---|
| autor | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. |
| autorsonst | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. |
| book_url | http://dx.doi.org/10.1063/1.367376 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218464304 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | The pseudodielectric function of InAs/Ga1−xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy, was measured by spectroscopic ellipsometry (SE) for photon energies ranging from 1.2 to 5 eV. The width of the extrema in the SL pseudodielectric function derived from the E1 and E1+Δ1 interband transitions of the SL constituents InAs and Ga1−xInxSb, was found to depend on the structural quality of the SL. Differences in the SL quality caused by different sequences of InSb- like and GaAs-like interfaces, were easily detected by SE. The formation of the intended interface alternations was verified by Raman spectroscopy. The extrema in the SL pseudodielectric function originating from the E1 and E1+Δ1 interband transitions of Ga1−xInxSb were found to shift to lower energies with increasing In content x. Finally SE has been applied to the analysis of a complete InAs/Ga1−xInxSb SL detector structure. © 1998 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1998 |
| publikationsjahr_facette | 1998 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1998 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 83 (1998), S. 5452-5457 |
| search_space | articles |
| shingle_author_1 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. |
| shingle_author_2 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. |
| shingle_author_3 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. |
| shingle_author_4 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. |
| shingle_catch_all_1 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices The pseudodielectric function of InAs/Ga1−xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy, was measured by spectroscopic ellipsometry (SE) for photon energies ranging from 1.2 to 5 eV. The width of the extrema in the SL pseudodielectric function derived from the E1 and E1+Δ1 interband transitions of the SL constituents InAs and Ga1−xInxSb, was found to depend on the structural quality of the SL. Differences in the SL quality caused by different sequences of InSb- like and GaAs-like interfaces, were easily detected by SE. The formation of the intended interface alternations was verified by Raman spectroscopy. The extrema in the SL pseudodielectric function originating from the E1 and E1+Δ1 interband transitions of Ga1−xInxSb were found to shift to lower energies with increasing In content x. Finally SE has been applied to the analysis of a complete InAs/Ga1−xInxSb SL detector structure. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices The pseudodielectric function of InAs/Ga1−xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy, was measured by spectroscopic ellipsometry (SE) for photon energies ranging from 1.2 to 5 eV. The width of the extrema in the SL pseudodielectric function derived from the E1 and E1+Δ1 interband transitions of the SL constituents InAs and Ga1−xInxSb, was found to depend on the structural quality of the SL. Differences in the SL quality caused by different sequences of InSb- like and GaAs-like interfaces, were easily detected by SE. The formation of the intended interface alternations was verified by Raman spectroscopy. The extrema in the SL pseudodielectric function originating from the E1 and E1+Δ1 interband transitions of Ga1−xInxSb were found to shift to lower energies with increasing In content x. Finally SE has been applied to the analysis of a complete InAs/Ga1−xInxSb SL detector structure. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices The pseudodielectric function of InAs/Ga1−xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy, was measured by spectroscopic ellipsometry (SE) for photon energies ranging from 1.2 to 5 eV. The width of the extrema in the SL pseudodielectric function derived from the E1 and E1+Δ1 interband transitions of the SL constituents InAs and Ga1−xInxSb, was found to depend on the structural quality of the SL. Differences in the SL quality caused by different sequences of InSb- like and GaAs-like interfaces, were easily detected by SE. The formation of the intended interface alternations was verified by Raman spectroscopy. The extrema in the SL pseudodielectric function originating from the E1 and E1+Δ1 interband transitions of Ga1−xInxSb were found to shift to lower energies with increasing In content x. Finally SE has been applied to the analysis of a complete InAs/Ga1−xInxSb SL detector structure. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Wagner, J. Schmitz, J. Herres, N. Fuchs, F. Walther, M. Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices The pseudodielectric function of InAs/Ga1−xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy, was measured by spectroscopic ellipsometry (SE) for photon energies ranging from 1.2 to 5 eV. The width of the extrema in the SL pseudodielectric function derived from the E1 and E1+Δ1 interband transitions of the SL constituents InAs and Ga1−xInxSb, was found to depend on the structural quality of the SL. Differences in the SL quality caused by different sequences of InSb- like and GaAs-like interfaces, were easily detected by SE. The formation of the intended interface alternations was verified by Raman spectroscopy. The extrema in the SL pseudodielectric function originating from the E1 and E1+Δ1 interband transitions of Ga1−xInxSb were found to shift to lower energies with increasing In content x. Finally SE has been applied to the analysis of a complete InAs/Ga1−xInxSb SL detector structure. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices |
| shingle_title_2 | Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices |
| shingle_title_3 | Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices |
| shingle_title_4 | Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:04.329Z |
| titel | Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices |
| titel_suche | Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices |
| topic | U |
| uid | nat_lic_papers_NLZ218464304 |