Theoretical modeling of the photoluminescence spectra associated with free-carrier to acceptor-impurity recombination in quantum-size GaAs wire crystals
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1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A theoretical study of the photoluminescence spectra associated with free-carrier to acceptor-impurity recombination in quantum-size GaAs wire crystals is presented. We model the actual GaAs quantum wires via GaAs low-dimensional systems with finite cylindrical shape and hard-wall boundaries. The acceptor states are described within a variational scheme in the effective-mass approximation. The photoluminescence spectra associated with free carriers recombining with acceptor states are calculated for a homogeneous distribution of acceptor impurities within the low-dimensional heterostructure. We found that for a system whose length is comparable to the radius the photoluminescence line shape shows three structures associated with impurities located at special regions in the heterostructure, whereas for a system whose length is much larger than the radius we obtain two well-defined peaks, associated with acceptors either at the center position or the edge position in the low-dimensional system. Both the peak positions and relative intensities are in good agreement with spectral features present in experimental data on GaAs quantum-wire microcrystals. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |