Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition
Chichibu, S. ; Arita, M. ; Nakanishi, H.
[S.l.] : American Institute of Physics (AIP)
Published 1998
[S.l.] : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Two energetically-separated resonance structures were found in photoreflectance (PR) spectra of three-dimensional InxGa1−xN epilayers (0.05≤x≤0.2) grown by metalorganic chemical vapor deposition. Energy difference between the two structures was nearly constant about 50 meV for all x examined. The broadening parameter of each structure was nearly independent of x (∼50 meV), indicating that each separated region has rather homogeneous net potential fluctuation. The photoluminescence (PL) peak energy agreed with the resonance energy of the lower-energy PR structure, showing nearly zero Stokes-like shift at room temperature. Observation of a single PL peak indicated that photoexcited carriers were effectively corrected into the separated regions having lower PR resonance energy. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |