Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates
Sasaki, T. ; Mori, H. ; Tachikawa, M. ; Yamada, T.
[S.l.] : American Institute of Physics (AIP)
Published 1998
[S.l.] : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
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| Notes: |
Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289639514046465 |
|---|---|
| autor | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. |
| autorsonst | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. |
| book_url | http://dx.doi.org/10.1063/1.368999 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218448031 |
| iqvoc_descriptor_title | iqvoc_00000633:diodes |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1998 |
| publikationsjahr_facette | 1998 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1998 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 84 (1998), S. 6725-6728 |
| search_space | articles |
| shingle_author_1 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. |
| shingle_author_2 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. |
| shingle_author_3 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. |
| shingle_author_4 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. |
| shingle_catch_all_1 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Sasaki, T. Mori, H. Tachikawa, M. Yamada, T. Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates |
| shingle_title_2 | Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates |
| shingle_title_3 | Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates |
| shingle_title_4 | Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:02.497Z |
| titel | Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates |
| titel_suche | Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates |
| topic | U |
| uid | nat_lic_papers_NLZ218448031 |