Interdiffusion in GaAs(1-x)Sbx/GaAs superlattices studied with high-resolution x-ray diffraction and secondary ion mass spectroscopy

1089-7550

AIP Digital Archive

Physics

Nominally undoped GaAsSb/GaAs superlattices were annealed at temperatures between 900 and 1100 °C in a closed quartz ampoule. A strong dependence of the interdiffusion coefficients in the GaAs/GaAsSb superlattices on the arsenic vapor pressure was observed by two independent methods: secondary ion mass spectroscopy, and high-resolution x-ray diffraction using dynamic calculations to extract interdiffusion coefficients. The interdiffusion coefficient was low in the Ga-rich regime where an Arrhenius like dependence with an activation energy of 1.5±0.4 eV and a preexponential factor of 7.1×10−12 cm2 s−1 was found. For the As-rich regime the activation energy was 2.0±0.1 eV and the preexponential factor 7.8×10−9 cm2 s−1. © 1998 American Institute of Physics.

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