Law, M. E., Haddara, Y. M., & Jones, K. S. (1998). Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination. American Institute of Physics (AIP).
Chicago Style (17th ed.) CitationLaw, M. E., Y. M. Haddara, and K. S. Jones. Effect of the Silicon/oxide Interface on Interstitials: Di-interstitial Recombination. [S.l.]: American Institute of Physics (AIP), 1998.
MLA (9th ed.) CitationLaw, M. E., et al. Effect of the Silicon/oxide Interface on Interstitials: Di-interstitial Recombination. American Institute of Physics (AIP), 1998.
Warning: These citations may not always be 100% accurate.