Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination
Law, M. E. ; Haddara, Y. M. ; Jones, K. S.
[S.l.] : American Institute of Physics (AIP)
Published 1998
[S.l.] : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Interstitials can recombine at an oxide/silicon interface. Previous experimental work produces contradictory results. Transient enhanced diffusion experiments suggest a nearly infinite surface recombination rate, while oxidation enhanced diffusion suggests a much weaker recombination rate. A di-interstitial mechanism is investigated, and analytic solutions are developed. This is compared to the more commonly used interstitial mechanism. The di-interstitial mechanism can account for most of the discrepancy in the data. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |