First principles modeling of magnetic random access memory devices (invited)
Butler, W. H. ; Zhang, X.-G. ; Schulthess, T. C. ; Nicholson, D. M. C. ; Oparin, A. B.
[S.l.] : American Institute of Physics (AIP)
Published 1999
[S.l.] : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Giant magnetoresistance (GMR) and spin-dependent tunneling may be used to make magnetic random access memory devices. We have applied first-principles based electronic structure techniques to understand these effects and in the case of GMR to model the transport properties of the devices. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |