Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency

Lu, Yu. ; Trouilloud, P. L. ; Abraham, D. W. ; Koch, R. ; Slonczewski, J. ; Brown, S. ; Bucchignano, J. ; O'Sullivan, E. ; Wanner, R. A. ; Gallagher, W. J.

[S.l.] : American Institute of Physics (AIP)
Published 1999
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Understanding the magnetic switching behavior in micron and submicron scale specimens is important for a number of applications. In this study, magnetic-tunnel junctions of various sizes and shapes were fabricated and their switching behavior was studied in detail. Using exchange bias to offset the magnetic response of one electrode, the response of the other (free) electrode was determined from measurements of junction resistance. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of our smallest submicron junctions. The observed behavior was compared with predictions from the Stoner–Wohlfarth rotational model and from numerical calculations. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289690838695936
autor Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
autorsonst Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
book_url http://dx.doi.org/10.1063/1.369850
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218428944
issn 1089-7550
journal_name Journal of Applied Physics
materialart 1
notes Understanding the magnetic switching behavior in micron and submicron scale specimens is important for a number of applications. In this study, magnetic-tunnel junctions of various sizes and shapes were fabricated and their switching behavior was studied in detail. Using exchange bias to offset the magnetic response of one electrode, the response of the other (free) electrode was determined from measurements of junction resistance. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of our smallest submicron junctions. The observed behavior was compared with predictions from the Stoner–Wohlfarth rotational model and from numerical calculations. © 1999 American Institute of Physics.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1999
publikationsjahr_facette 1999
publikationsjahr_intervall 8004:1995-1999
publikationsjahr_sort 1999
publikationsort [S.l.]
publisher American Institute of Physics (AIP)
reference 85 (1999), S. 5267-5269
search_space articles
shingle_author_1 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
shingle_author_2 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
shingle_author_3 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
shingle_author_4 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
shingle_catch_all_1 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
Understanding the magnetic switching behavior in micron and submicron scale specimens is important for a number of applications. In this study, magnetic-tunnel junctions of various sizes and shapes were fabricated and their switching behavior was studied in detail. Using exchange bias to offset the magnetic response of one electrode, the response of the other (free) electrode was determined from measurements of junction resistance. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of our smallest submicron junctions. The observed behavior was compared with predictions from the Stoner–Wohlfarth rotational model and from numerical calculations. © 1999 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_2 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
Understanding the magnetic switching behavior in micron and submicron scale specimens is important for a number of applications. In this study, magnetic-tunnel junctions of various sizes and shapes were fabricated and their switching behavior was studied in detail. Using exchange bias to offset the magnetic response of one electrode, the response of the other (free) electrode was determined from measurements of junction resistance. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of our smallest submicron junctions. The observed behavior was compared with predictions from the Stoner–Wohlfarth rotational model and from numerical calculations. © 1999 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_3 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
Understanding the magnetic switching behavior in micron and submicron scale specimens is important for a number of applications. In this study, magnetic-tunnel junctions of various sizes and shapes were fabricated and their switching behavior was studied in detail. Using exchange bias to offset the magnetic response of one electrode, the response of the other (free) electrode was determined from measurements of junction resistance. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of our smallest submicron junctions. The observed behavior was compared with predictions from the Stoner–Wohlfarth rotational model and from numerical calculations. © 1999 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_4 Lu, Yu.
Trouilloud, P. L.
Abraham, D. W.
Koch, R.
Slonczewski, J.
Brown, S.
Bucchignano, J.
O'Sullivan, E.
Wanner, R. A.
Gallagher, W. J.
Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
Understanding the magnetic switching behavior in micron and submicron scale specimens is important for a number of applications. In this study, magnetic-tunnel junctions of various sizes and shapes were fabricated and their switching behavior was studied in detail. Using exchange bias to offset the magnetic response of one electrode, the response of the other (free) electrode was determined from measurements of junction resistance. Switching threshold curves were measured by sweeping magnetic fields in both easy and hard direction. Single domain like switching was observed in some of our smallest submicron junctions. The observed behavior was compared with predictions from the Stoner–Wohlfarth rotational model and from numerical calculations. © 1999 American Institute of Physics.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_title_1 Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
shingle_title_2 Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
shingle_title_3 Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
shingle_title_4 Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
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geomar
wilbert
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albert
source_archive AIP Digital Archive
timestamp 2024-05-06T08:04:51.136Z
titel Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
titel_suche Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
topic U
uid nat_lic_papers_NLZ218428944