Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs

1089-7550

AIP Digital Archive

Physics

Nuclear reaction analysis (NRA), using the 12C(d,p)13C reaction, in conjunction with Rutherford backscattering spectrometry (RBS) in the channeling geometry was used to evaluate the substitutional fraction of C in (100)-oriented semi-insulating GaAs implanted with 12C ions to a dose of 5×1016 cm−2. The substitutional fraction of the implanted 12C evaluated by NRA was 19% in the samples annealed at 600 °C, whereas the electrical activation rate of the same sample was 2.1%, as measured by the van der Pauw method. It is suggested that a possible origin of this discrepancy is the compensating centers such as As vacancy (VAs) and/or VAs-CAs complex introduced in the annealing processes. This was supported by both the surface precipitation of As observed by Raman scattering and the enhancement of the surface peak in RBS-channeling yield which was measured by using a 1.5 MeV 4He+-ion beam. © 1999 American Institute of Physics.

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