Oxidation-induced traps near SiO2/SiGe interface
Ahn, C. G. ; Kang, H. S. ; Kwon, Y. K. ; Lee, S. M. ; Ryum, B. R. ; Kang, B. K.
[S.l.] : American Institute of Physics (AIP)
Published 1999
[S.l.] : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289689964183553 |
|---|---|
| autor | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. |
| autorsonst | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. |
| book_url | http://dx.doi.org/10.1063/1.370927 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218419163 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1999 |
| publikationsjahr_facette | 1999 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1999 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 86 (1999), S. 1542-1547 |
| search_space | articles |
| shingle_author_1 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. |
| shingle_author_2 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. |
| shingle_author_3 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. |
| shingle_author_4 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. |
| shingle_catch_all_1 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. Oxidation-induced traps near SiO2/SiGe interface Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. Oxidation-induced traps near SiO2/SiGe interface Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. Oxidation-induced traps near SiO2/SiGe interface Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Ahn, C. G. Kang, H. S. Kwon, Y. K. Lee, S. M. Ryum, B. R. Kang, B. K. Oxidation-induced traps near SiO2/SiGe interface Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Oxidation-induced traps near SiO2/SiGe interface |
| shingle_title_2 | Oxidation-induced traps near SiO2/SiGe interface |
| shingle_title_3 | Oxidation-induced traps near SiO2/SiGe interface |
| shingle_title_4 | Oxidation-induced traps near SiO2/SiGe interface |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:49.980Z |
| titel | Oxidation-induced traps near SiO2/SiGe interface |
| titel_suche | Oxidation-induced traps near SiO2/SiGe interface |
| topic | U |
| uid | nat_lic_papers_NLZ218419163 |