Self-diffusivity of liquid silicon measured by pulsed laser melting
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The silicon liquid self-diffusivity was determined by pulsed laser melting of 30Si ion implanted silicon-on-insulator thin films. Secondary ion mass spectrometry was employed to measure the 30Si+ concentration-depth profile before and after melting and solidification. Melt depth versus time and total melt duration were monitored by time-resolved lateral electrical conductance and optical reflectance measurements. One-dimensional diffusion simulations were utilized to match the final 30Si+ experimental concentration spatial profile given the initial concentration profile and the temporal melt-depth profile. The silicon liquid self-diffusivity at the melting point is (4.0±0.5)×10−4 cm2/s. Calculations of buoyancy and Marangoni convection indicate that convective contamination is unlikely. © 1999 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |