Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces
Hopf, C. ; Schwarz-Selinger, T. ; Jacob, W. ; von Keudell, A.
[S.l.] : American Institute of Physics (AIP)
Published 2000
[S.l.] : American Institute of Physics (AIP)
Published 2000
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
|
| Notes: |
The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability β is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals β=0.80±0.05, for C2H3 radicals β=0.35±0.1, and for C2H5 radicals β〈10−3. The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge. © 2000 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289688221450243 |
|---|---|
| autor | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. |
| autorsonst | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. |
| book_url | http://dx.doi.org/10.1063/1.372246 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218405383 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability β is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals β=0.80±0.05, for C2H3 radicals β=0.35±0.1, and for C2H5 radicals β〈10−3. The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge. © 2000 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 2000 |
| publikationsjahr_facette | 2000 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2000 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 87 (2000), S. 2719-2725 |
| search_space | articles |
| shingle_author_1 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. |
| shingle_author_2 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. |
| shingle_author_3 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. |
| shingle_author_4 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. |
| shingle_catch_all_1 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability β is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals β=0.80±0.05, for C2H3 radicals β=0.35±0.1, and for C2H5 radicals β〈10−3. The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability β is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals β=0.80±0.05, for C2H3 radicals β=0.35±0.1, and for C2H5 radicals β〈10−3. The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability β is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals β=0.80±0.05, for C2H3 radicals β=0.35±0.1, and for C2H5 radicals β〈10−3. The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Hopf, C. Schwarz-Selinger, T. Jacob, W. von Keudell, A. Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability β is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals β=0.80±0.05, for C2H3 radicals β=0.35±0.1, and for C2H5 radicals β〈10−3. The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces |
| shingle_title_2 | Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces |
| shingle_title_3 | Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces |
| shingle_title_4 | Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:48.816Z |
| titel | Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces |
| titel_suche | Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces |
| topic | U |
| uid | nat_lic_papers_NLZ218405383 |