Flicker noise properties of organic thin-film transistors
Martin, S. ; Dodabalapur, A. ; Bao, Z. ; Crone, B. ; Katz, H. E. ; Li, W. ; Passner, A. ; Rogers, J. A.
[S.l.] : American Institute of Physics (AIP)
Published 2000
[S.l.] : American Institute of Physics (AIP)
Published 2000
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289688200478720 |
|---|---|
| autor | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. |
| autorsonst | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. |
| book_url | http://dx.doi.org/10.1063/1.372354 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218404980 |
| iqvoc_descriptor_title | iqvoc_00000627:transistors |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 2000 |
| publikationsjahr_facette | 2000 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2000 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 87 (2000), S. 3381-3385 |
| search_space | articles |
| shingle_author_1 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. |
| shingle_author_2 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. |
| shingle_author_3 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. |
| shingle_author_4 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. |
| shingle_catch_all_1 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. Flicker noise properties of organic thin-film transistors The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. Flicker noise properties of organic thin-film transistors The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. Flicker noise properties of organic thin-film transistors The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Martin, S. Dodabalapur, A. Bao, Z. Crone, B. Katz, H. E. Li, W. Passner, A. Rogers, J. A. Flicker noise properties of organic thin-film transistors The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Flicker noise properties of organic thin-film transistors |
| shingle_title_2 | Flicker noise properties of organic thin-film transistors |
| shingle_title_3 | Flicker noise properties of organic thin-film transistors |
| shingle_title_4 | Flicker noise properties of organic thin-film transistors |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:48.816Z |
| titel | Flicker noise properties of organic thin-film transistors |
| titel_suche | Flicker noise properties of organic thin-film transistors |
| topic | U |
| uid | nat_lic_papers_NLZ218404980 |