Quantitative two-dimensional carrier profiling of a 400 nm complementary metal–oxide–semiconductor device by Schottky scanning capacitance microscopy

1089-7550

AIP Digital Archive

Physics

Carrier profiling of a 400 nm complementary metal–oxide–semiconductor device has been accomplished by combining metal–semiconductor capacitance–voltage profiling techniques with two-dimensional scanning probe microscopy. When a metal probe is brought into contact with a semiconductor, a space-charged depletion region and therefore a capacitor is formed at the junction. By applying a small ac voltage, the voltage derivative of the contact capacitance can be measured with a lock-in amplifier. The amplitude of the derivative signal is a function of the carrier concentration, and the sign gives the type of carrier. The present work concentrates on the two dimensional (2D) carrier profiling of a 400 nm metal–oxide–semiconductor field effect transistor. The results demonstrate that this technique is capable of quantitative 2D characterization of semiconductor devices. © 2000 American Institute of Physics.

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