Kinetics of the photorefractive response of bismuth silicon oxide

1089-7550

AIP Digital Archive

Physics

The kinetics of production and dark decay of index gratings in Bismuth Silicon Oxide was investigated as a function of write-beam intensity at 300 K and of temperature over the 20–300 K temperature range. At 300 K and an intensity of about 200 mW/cm2 the gratings show a fast leading-edge peak which drops to a steady saturated value. At lower intensities the peak slows and broaden, but the grating strength at saturation remains the same. As the temperature is lowered the gratings grow more slowly, and the peak disappears at about 200 K. The slowing and disappearance of the peak are probably related to the large decrease in electron mobility in this temperature range. Below 225 K the grating strength at the end of the 500 ms write time grows significantly and reaches a maximum in the 125–150 K temperature region. The dark decays disappear quickly for temperatures down to about 180 K. At lower temperatures the decays become much slower and become persistent below 60 K. The largest change appears between 150 and 123 K. A persistent grating was written at 20 K, and its strength was measured as the sample warmed. The persistent grating annealed out between 110 and 150 K. The slowing of the dark decays and the anneal of the persistent grating correlate with the reported recovery of Fe3+. © 2001 American Institute of Physics.

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