Enhanced positive magnetoresistance effect in GaAs with nanoscale magnetic clusters
Yuldashev, Sh. U. ; Shon, Y. ; Kwon, Y. H. ; Fu, D. J. ; Kim, D. Y. ; Kim, H. J. ; Kang, T. W.
[S.l.] : American Institute of Physics (AIP)
Published 2001
[S.l.] : American Institute of Physics (AIP)
Published 2001
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The enhanced positive magnetoresistance effect has been observed in GaAs containing nanoscale magnetic clusters. The ferromagnetic metallic clusters were embedded into GaAs by Mn ion implantation and rapid thermal annealing. Positive magnetoresistance in these structures has been observed and attributed to the enhanced geometric magnetoresistance effect in inhomogeneous semiconductors with metallic inclusions. The additional enhancement of positive magnetoresistance under light illumination is due to the higher mobility of photoexcited electrons in comparison with the mobility of holes in p-type GaAs prepared by Mn ion implantation. © 2001 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |