Enhanced ballistic transport in InGaAs/InAlAs hot-electron transistors
Chen, J. ; Reddy, U. K. ; Mui, D. ; Peng, C. K. ; Morkoç, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Hot-electron transistors fabricated using a 600-A(ring) InGaAs base and a 500-A(ring) InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ-L scattering.
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| Type of Medium: |
Electronic Resource
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| URL: |