Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities
Chen, H. Z. ; Ghaffari, A. ; Morkoç, H. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 A(ring) have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current density appears to be independent of the well thickness in the range of 65–165 A(ring) due to the compensating effects of volume of inversion and optical confinement. Under optimum growth conditions, the tilted substrates led to lower threshold current densities, the lowest value being 93 A/cm2 for a 520-μm-long cavity laser with a 125-A(ring)-thick well. To our knowledge, this is by far the best ever reported threshold current density obtained in a semiconductor injection laser. Deviations from optimum growth conditions drastically increased the threshold current density on (100) substrates whereas the degradation for those on the tilted substrates was much less pronounced.
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| Type of Medium: |
Electronic Resource
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| URL: |