Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes
Nakagawa, T. ; Fujita, T. ; Matsumoto, Y. ; Kojima, T. ; Ohta, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
Woodbury, NY : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
|
| Notes: |
Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth.
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| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289635966713856 |
|---|---|
| autor | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. |
| autorsonst | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. |
| book_url | http://dx.doi.org/10.1063/1.98417 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218331517 |
| iqvoc_descriptor_title | iqvoc_00000633:diodes |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1987 |
| publikationsjahr_facette | 1987 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1987 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 51 (1987), S. 445-447 |
| search_space | articles |
| shingle_author_1 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. |
| shingle_author_2 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. |
| shingle_author_3 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. |
| shingle_author_4 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. |
| shingle_catch_all_1 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Nakagawa, T. Fujita, T. Matsumoto, Y. Kojima, T. Ohta, K. Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes |
| shingle_title_2 | Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes |
| shingle_title_3 | Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes |
| shingle_title_4 | Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:59.015Z |
| titel | Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes |
| titel_suche | Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes |
| topic | U |
| uid | nat_lic_papers_NLZ218331517 |