Specific lattice location of Zn in CdTe determined by ion-channeling methods
Haga, T. ; Suzuki, H. ; Rashid, M. H. ; Abe, Y. ; Tanaka, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289635681501184 |
|---|---|
| autor | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. |
| autorsonst | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. |
| book_url | http://dx.doi.org/10.1063/1.99653 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218324766 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1988 |
| publikationsjahr_facette | 1988 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1988 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 52 (1988), S. 200-202 |
| search_space | articles |
| shingle_author_1 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. |
| shingle_author_2 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. |
| shingle_author_3 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. |
| shingle_author_4 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. |
| shingle_catch_all_1 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. Specific lattice location of Zn in CdTe determined by ion-channeling methods The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. Specific lattice location of Zn in CdTe determined by ion-channeling methods The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. Specific lattice location of Zn in CdTe determined by ion-channeling methods The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Haga, T. Suzuki, H. Rashid, M. H. Abe, Y. Tanaka, A. Specific lattice location of Zn in CdTe determined by ion-channeling methods The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Specific lattice location of Zn in CdTe determined by ion-channeling methods |
| shingle_title_2 | Specific lattice location of Zn in CdTe determined by ion-channeling methods |
| shingle_title_3 | Specific lattice location of Zn in CdTe determined by ion-channeling methods |
| shingle_title_4 | Specific lattice location of Zn in CdTe determined by ion-channeling methods |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:58.903Z |
| titel | Specific lattice location of Zn in CdTe determined by ion-channeling methods |
| titel_suche | Specific lattice location of Zn in CdTe determined by ion-channeling methods |
| topic | U |
| uid | nat_lic_papers_NLZ218324766 |