Identification of residual donors in high-purity undoped p-type epitaxial GaAs by magnetophotoluminescence
Bose, S. S. ; Kim, M. H. ; Stillman, G. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The residual donor species, Si, S, and Ge, have been identified in high-purity undoped p-type epitaxial GaAs grown by metalorganic chemical vapor deposition and arsenic trichloride vapor phase techniques using the magnetic splittings of "two-electron'' replicas of donor bound exciton transitions at low temperature (∼1.8 K) and at a high magnetic field (9.0 T). This technique permits identification of donors in certain high-purity p-type GaAs samples in which donor species cannot be identified by photothermal ionization spectroscopy or any other technique.
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| Type of Medium: |
Electronic Resource
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| URL: |