Diluted magnetic semiconductor (Cd1−xMnxTe) Schottky diodes and field-effect transistors
Dreifus, D. L. ; Kolbas, R. M. ; Harper, R. L. ; Tassitino, J. R. ; Hwang, S. ; Schetzina, J. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report the first demonstration of electronic devices, Schottky diodes, and metal-semiconductor field-effect transistors, in a diluted magnetic semiconductor Cd1−xMnxTe. These devices were fabricated using n-type, indium-doped CdMnTe films grown by photoassisted molecular beam epitaxy on (100) CdTe and CdZnTe substrates. Epitaxial layers with carrier concentrations of 1×1017 cm−3 and electron mobilities as large as 720 cm2/V s at 120 K were used. The Schottky diodes have turn-on voltages of 0.8 V, idealities in the range between 1.27 and 1.7, and reverse breakdown voltages from 5.5 to 10.5 V reverse bias. The 100 μm gate length transistors have transconductances of 1 mS/mm.
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| Type of Medium: |
Electronic Resource
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| URL: |