Excimer laser induced oxidation of ion-implanted silicon

Fogarassy, E. ; White, C. W. ; Slaoui, A. ; Fuchs, C. ; Siffert, P. ; Pennycook, S. J.

Woodbury, NY : American Institute of Physics (AIP)
Published 1988
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated laser-induced oxidation of ion-implanted Si using a repetitively pulsed ArF laser, working at low-energy density (100–500 mJ/cm2). Oxidation is observed at energy densities between the melt threshold and that required for epitaxial recrystallization of the amorphous layer. At these energy densities, oxidation is not observed on virgin silicon. The factors that influence the oxidation process are discussed.
Type of Medium:
Electronic Resource
URL: