Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films
Sandstrom, R. L. ; Giess, E. A. ; Gallagher, W. J. ; Segmüller, A. ; Cooper, E. I. ; Chisholm, M. F. ; Gupta, A. ; Shinde, S. ; Laibowitz, R. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
We demonstrate that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O7−x, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε(approximately-equal-to)25) and low dielectric losses. Epitaxial YBa2Cu3O7−x films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.
|
| Type of Medium: |
Electronic Resource
|
| URL: |