Epitaxial growth of YBa2Cu3O7−x thin films on (110) SrTiO3 single crystals by activated reactive evaporation
Terashima, T. ; Bando, Y. ; Iijima, K. ; Yamamoto, K. ; Hirata, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The orientation of YBa2Cu3O7−x thin films grown on (110) planes of SrTiO3 by activated reactive evaporation was investigated by means of reflection high-energy electron diffraction. The orientation of the films depended on the substrate temperature. The films with (110) planes parallel to the substrate surface grew in a narrow range of substrate temperatures around 530 °C, while the films with (103) planes parallel to the surface grew at temperatures above 600 °C. The change of the epitaxial orientation with the substrate temperature is discussed in terms of the temperature dependence of the lattice mismatch between YBa2Cu3O7−x and SrTiO3.
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| Type of Medium: |
Electronic Resource
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| URL: |