Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy
Joseph, David M. ; Balagopal, Rajappan ; Hicks, Robert F. ; Sadwick, Laurence P. ; Wang, Kang L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200 °C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm−1 with a shoulder at 2950 cm−1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH3 and/or CH2 groups.
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| Type of Medium: |
Electronic Resource
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| URL: |