Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealing
Chi, J. Y. ; Koteles, Emil S. ; Holmstrom, R. P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A spatially selective technique for modifying exciton energies in quantum wells by employing rapid thermal annealing and silicon dioxide capping is demonstrated in the InGaAs/AlInAs material system. Exciton emission energies in these quantum wells are blue shifted by as much as 60 meV after a 15 s rapid thermal anneal above 800 °C. The dependence of the energy shift on well width and annealing temperature is studied by measuring low-temperature photoluminescence spectra of single quantum wells. In contrast to the GaAs/AlGaAs case, a silicon dioxide film deposited on the surface inhibits the energy shift suggesting that a different mechanism is operating in the present material system.
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| Type of Medium: |
Electronic Resource
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| URL: |