High-power GaAs/AlGaAs diode lasers grown on a Si substrate by metalorganic chemical vapor deposition
Connolly, J. ; Dinkel, N. ; Menna, R. ; Gilbert, D. ; Harvey, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
High-power GaAs/AlGaAs double-heterostructure lasers have been fabricated on Si substrates using a single-step metalorganic chemical vapor deposition process. An output power of 130 mW (per facet) and a slope efficiency of 38% have been obtained under pulsed operation. The peak emission wavelength of the laser was 8823 A(ring) and the beam full width at half power for the parallel and perpendicular far-field radiation patterns were 6° and 41°, respectively.
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| Type of Medium: |
Electronic Resource
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| URL: |