Growth of GaAs-Al-GaAs by migration-enhanced epitaxy
Tadayon, Bijan ; Tadayon, Saied ; Spencer, M. G. ; Harris, G. L. ; Rathbun, L. ; Bradshaw, J. T. ; Schaff, W. J. ; Tasker, P. J. ; Eastman, L. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The GaAs-Al-GaAs structure is grown using migration-enhanced epitaxy (MEE) method at low temperature on a molecular beam epitaxy machine. With MEE the interdiffusion between Al and GaAs is reduced by a large amount, and the morphology is improved by a large degree. Still, Raman spectrum indicates poor crystallinity for the GaAs of the top layer. The effect of different annealing temperatures on the interdiffusion is also studied.
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| Type of Medium: |
Electronic Resource
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| URL: |