GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating
Wu, M. C. ; Boenke, M. M. ; Wang, S. ; Clark, W. M. ; Stevens, E. H. ; Utlaut, M. W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
Woodbury, NY : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report for the first time, the performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR). Stripes of Si++ with a period of 2300 A(ring) and a dose ∼1014 cm−2 are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 °C are obtained. The wavelength tuning rate with temperature is 0.8 A(ring)/°C. The coupling coefficient is estimated to be 15 cm−1. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
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| Type of Medium: |
Electronic Resource
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| URL: |