Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface
Qian, Q.-D. ; Qiu, J. ; Melloch, M. R. ; Cooper, J. A. ; Kolodziejski, L. A. ; Kobayashi, M. ; Gunshor, R. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10−8 A cm−2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
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| Type of Medium: |
Electronic Resource
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| URL: |