Alloy broadening of the emission barrier of the DX center in aluminum gallium arsenide
Subramanian, S. ; Anand, S. ; Chakravarty, S. ; Arora, B. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The effect of alloy fluctuations on the emission barrier of the DX center in aluminum gallium arsenide (AlGaAs) is studied by constant capacitance deep level transient spectroscopy using Si-doped and Sn-doped samples grown by different growth techniques. All the samples showed single broadened peaks which were analyzed by assuming a Gaussian distribution for the emission barrier. The full width at half maximum for the emission barrier spread was found to be the same (∼0.05+0.005 eV) for all the samples and is of the same order as the reported capture barrier spread for Si-doped AlGaAs, which strongly suggests that the binding energy spread of the DX center in AlGaAs is very small.
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| Type of Medium: |
Electronic Resource
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| URL: |