Atomic layer epitaxy of GaAs using triethylgallium and arsine
Ohno, H. ; Ohtsuka, S. ; Ishii, H. ; Matsubara, Y. ; Hasegawa, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289633588543489 |
|---|---|
| autor | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. |
| autorsonst | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. |
| book_url | http://dx.doi.org/10.1063/1.101195 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218309619 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1989 |
| publikationsjahr_facette | 1989 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1989 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 54 (1989), S. 2000-2002 |
| search_space | articles |
| shingle_author_1 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. |
| shingle_author_2 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. |
| shingle_author_3 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. |
| shingle_author_4 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. |
| shingle_catch_all_1 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. Atomic layer epitaxy of GaAs using triethylgallium and arsine Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. Atomic layer epitaxy of GaAs using triethylgallium and arsine Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. Atomic layer epitaxy of GaAs using triethylgallium and arsine Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Ohno, H. Ohtsuka, S. Ishii, H. Matsubara, Y. Hasegawa, H. Atomic layer epitaxy of GaAs using triethylgallium and arsine Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Atomic layer epitaxy of GaAs using triethylgallium and arsine |
| shingle_title_2 | Atomic layer epitaxy of GaAs using triethylgallium and arsine |
| shingle_title_3 | Atomic layer epitaxy of GaAs using triethylgallium and arsine |
| shingle_title_4 | Atomic layer epitaxy of GaAs using triethylgallium and arsine |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:56.635Z |
| titel | Atomic layer epitaxy of GaAs using triethylgallium and arsine |
| titel_suche | Atomic layer epitaxy of GaAs using triethylgallium and arsine |
| topic | U |
| uid | nat_lic_papers_NLZ218309619 |