Growth of cubic (zinc blende) CdSe by molecular beam epitaxy
Samarth, N. ; Luo, H. ; Furdyna, J. K. ; Qadri, S. B. ; Lee, Y. R. ; Ramdas, A. K. ; Otsuka, N.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 A(ring), and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.
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| Type of Medium: |
Electronic Resource
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| URL: |