Single target sputtering of superconducting YBa2Cu3O7−δ thin films on Si (100)
Migliuolo, M. ; Stamper, A. K. ; Greve, D. W. ; Schlesinger, T. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Thin films of YBa2Cu3O7−δ have been grown on (100) silicon substrates by single target rf diode sputtering. Yttria-stabilized zirconia buffer layers were used to minimize substrate-film reactions. Off-stoichiometric targets were used to compensate for differences between film and target stoichiometries. The composition of the superconducting layer is also influenced by post-deposition anneals, with films closer to the desired stoichiometry resulting from the higher temperature anneals. Film thicknesses spanned the 0.5–2.0 μm range and the onset and zero resistance ( ρ〈10−7 Ω cm) temperatures were found to be 95 and 70 K, respectively, for 1.8-μm-thick films.
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| Type of Medium: |
Electronic Resource
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| URL: |