Highly efficient separate-confinement PpinN GaAs/AlGaAs waveguide phase modulator
Lee, S. S. ; Kim, Y. S. ; Ramaswamy, R. V. ; Sundaram, V. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report a high-efficiency PpinN GaAs/AlGaAs waveguide phase modulator for high-speed operations. By introducing p- and n-GaAs layers beside the intrinsic GaAs layer of a P-i-N double heterostructure, the absorption edge-related effect, hardly used in P-i-N phase modulators, is utilized. We demonstrate a high phase shift efficiency of 37.5°/V mm at 1.3 μm wavelength. Although this corresponds to the highest expeirmental value reported for reverse-biased GaAs/AlGaAs phase modulators, our device operates with a low junction and a very low dynamic capacitance.
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| Type of Medium: |
Electronic Resource
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| URL: |