Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser

Yasuhira, N. ; Suemune, I. ; Kan, Y. ; Yamanishi, M.

Woodbury, NY : American Institute of Physics (AIP)
Published 1990
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new type of laser structure which utilizes the selectively doped double-heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDH-LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.
Type of Medium:
Electronic Resource
URL: